TORRANCE, Calif., July 12, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NASDAQ:NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced it will team up with its Japanese sales and marketing partner, J Rep, at Japan's largest power electronics trade show Techno-Frontier to highlight solutions including a hybrid GaN-SiC AI Server PSU, a 3-phase GaN industrial motor drive requiring no heatsink, and a GaN-based 8K-LE ...

TORRANCE, Calif., June 20, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NASDAQ:NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors today announced that its GaNFast power ICs have been selected to lead Lenovo's latest GaN technology chargers; Xiaoxin 105 W GaN charger, and the Legion C170 W GaN charger, respectively designed for daily travel and gaming power, bringing consumers a brand new fast charging experience. The Xiaoxi ...

文章核心观点 - 公司推出了新一代650V和1200V SiC MOSFET产品系列G3F,具有最快的开关速度、最高的效率和最高的功率密度 [1][2][3][4][5] - G3F系列采用专有的"沟槽辅助平面"技术,性能优于竞争对手的沟槽MOSFET,同时具有更好的稳定性、可制造性和成本优势 [3][4] - G3F系列MOSFET可实现高达600kHz的开关频率,在CCM TPPFC系统中的硬开关性能指标比竞争对手提高40% [2][8] - G3F系列MOSFET可应用于AI数据中心电源、电动车充电器、太阳能/储能系统等高功率、高可靠性的应用场景 [1][6][7] 公司概况 - 公司是下一代功率半导体领域的领导者,专注于GaN和SiC技术,成立于2014年 [9] - 公司拥有250多项已授权或待授权专利,是全球首家获得碳中和认证的半导体公司 [9] - 公司的产品包括GaNFast功率IC和GeneSiC功率器件,应用于电动车、太阳能、数据中心等领域 [9] 产品特点 - G3F系列SiC MOSFET具有最快的开关速度、最高的效率和最高的功率密度 [1][2][3][4][5][6][7][8] - 采用专有的"沟槽辅助平面"技术,性能优于竞争对手的沟槽MOSFET,同时具有更好的稳定性、可制造性和成本优势 [3][4] - 可实现高达600kHz的开关频率,在CCM TPPFC系统中的硬开关性能指标比竞争对手提高40% [2][8] - 可应用于AI数据中心电源、电动车充电器、太阳能/储能系统等高功率、高可靠性的应用场景 [1][6][7]

TORRANCE, Calif., June 06, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / ...

TORRANCE, Calif., May 21, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW. Now in its 25th year, Nuremberg, Germany’s “Power, Control an ...

TORRANCE, Calif., May 21, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW. Now in its 25th year, Nuremberg, Germany’s “Power, Control an ...

UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-Q (Mark One) QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES ☒ EXCHANGE ACT OF 1934 For the quarterly period ended March 31, 2024 or ☐ TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the transition period from ______ to ______ Commission file number: 001-39755 Navitas Semiconductor Corporation (Exact name of registrant as specified in its charter) Delaware 85-256022 ...

Navitas Semiconductor Corporation (NVTS) came out with a quarterly loss of $0.06 per share versus the Zacks Consensus Estimate of a loss of $0.04. This compares to loss of $0.07 per share a year ago. These figures are adjusted for non-recurring items. This quarterly report represents an earnings surprise of -50%. A quarter ago, it was expected that this company would post a loss of $0.05 per share when it actually produced a loss of $0.04, delivering a surprise of 20%. Over the last four quarters, the compa ...

总收入和盈利情况 - 第一季度2024年总收入为2,320万美元，较2023年同期增长73%[3] - 第一季度2024年GAAP运营亏损为3160万美元，较2023年同期的3550万美元亏损有所减少[3] 业务拓展和技术进展 - AI数据中心领域的GaNSafe和Gen-3 Fast GeneSiC技术已获得3家全球最大电源供应公司的设计胜利[6] - 新的22千瓦车载充电器平台相对于当前解决方案，充电速度提高3倍，功率密度提高2倍，节能30%，重量减轻40%[7] - 在美国、欧洲和亚洲赢得了6个新设计，用于2025年的太阳能优化器、微逆变器、串联逆变器和储能应用[8] - 在家电/工业领域，最新的、针对电机优化的GaNSense™半桥功率IC在15个客户开发中[9] - 移动/消费者领域，上个季度新增了20多个快速充电器，总共推出了450多款产品，包括所有前十大手机OEM的产品[10] 财务状况 - 截至2024年3月31日，现金及现金等价物为1.297亿美元[4] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的研发支出为20,229千美元，较去年同期增长了16.6%[21] - 非 GAAP 研发支出为12,859千美元，较去年同期增长了25.8%[21] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的销售、一般和管理支出为16,087千美元，较去年同期减少了15.6%[21] - 非 GAAP 销售、一般和管理支出为8,489千美元，较去年同期增长了12.1%[21] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的营运亏损为31,575千美元，较去年同期减少了11.0%[21] - 非 GAAP 营运亏损为11,833千美元，较去年同期减少了3.9%[21] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的净亏损为3,681千美元，较去年同期减少了94.1%[21] - 非 GAAP 净亏损为10,221千美元，较去年同期减少了6.5%[21] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的现金及现金等价物为129,682千美元，较上一季度减少了15.3%[22] - NAVITAS SEMICONDUCTOR 公司在2024年第一季度的总资产为467,889千美元，较上一季度减少了3.7%[22]

LOS ANGELES, May 08, 2024 (GLOBE NEWSWIRE) -- Ernst & Young LLP (EY US) today announced that Gene Sheridan, CEO and co-founder of Navitas Semiconductor (NASDAQ:NVTS) was named an Entrepreneur Of The Year® 2024 Greater Los Angeles Award finalist. Now in its 38th year, ‘Entrepreneur Of The Year' is the preeminent competitive business award for audacious leaders who disrupt markets, revolutionize sectors and have a transformational impact on lives. Over the past four decades, the program has recognized daring ...