Vishay Intertechnology (VSH) recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes.The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and reverse leakage current, increasing efficiency and reliability in switching power designs.These devices also offer high robustness with operating temperatures up to +175°C, having a low capacitance charge and low typical reverse leakage current and reducing conduction losses.Vishay is expected to gain solid traction ...